pb1000 ... pb1010, pb1000s ... pb1010s pb1000 ... pb1010 , pb1000s ... pb1010s silicon-bridge-rectifiers silizium-brckengleichrichter version 2011-03-22 type: pb... type: pb...s dimensions - ma?e [mm] nominal current C nennstrom 10 a alternating input voltage eingangswechselspannung 35...700 v type: pb... 19 x 19 x 6.8 [mm] plastic case C kunststoffgeh?use weight approx. C gewicht ca. 5.5 g type: pb...s 15.1 x 15.1 x 6.3 [mm] plastic case with al-bottom C kunststoffgeh?use mit alu-boden weight approx. C gewicht ca. 3.5 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging bulk standard lieferform lose im karton recognized product C underwriters laboratories inc.? file e175067 anerkanntes produkt C underwriters laboratories inc.? nr. e175067 maximum ratings grenzwerte type typ max. alternating input voltage max. eingangswechselspannung v vrms [v] repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] 1 ) pb1000 / pb1000s 35 50 PB1001 / PB1001s 70 100 pb1002 / pb1002s 140 200 pb1004 / pb1004s 280 400 pb1006 / pb1006s 420 600 pb1008 / pb1008s 560 800 pb1010 / pb1010s 700 1000 repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 50 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 135/150 a 1 ) rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 93 a 2 s operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c 1 per diode C pro diode 2 valid, if leads are kept at ambient temperature at a distance of 5 mm from case gltig, wenn die anschlussdr?hte in 5 mm abstand vom geh?use auf umgebungstemperatur gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 19 0.2 ? 3.9 6.8 0.2 1 9 1.2 12.7 0.3 _ = = ? 3 .6 1 0 . 9 0 . 5 1.0 1 9 6.3 0.5 10.9 0.5 15.1 0.2
pb1000 ... pb1010, pb1000s ... pb1010s characteristics kennwerte max. current with cooling fin 300 cm 2 dauergrenzstrom mit khlblech 300 cm 2 t a = 50c r-load c-load i fav 10.0 a 8.0 a forward voltage durchlass-spannung t j = 25c i f = 5 a v f < 1.2 v 1 ) leakage current sperrstrom t j = 25c v r = v rrm i r < 10 a isolation voltage terminals to case isolationsspannung anschlsse zum geh?use v iso > 2500 v thermal resistance junction C case w?rmewiderstand sperrschicht C geh?use r thc < 3.3 k/w admissible torque for mounting zul?ssiges anzugsdrehmoment m 4 9 10% lb.in 1 10% nm 1 per diode C pro diode 2 http://www.diotec.com/ ? diotec semiconductor ag forward characteristics (typical values) durchlasskennlinien (typische werte) 10 10 1 10 10 2 -1 -2 i f [a] 0.4 0.8 1.0 1.2 1.4 1.8 [v] v f t = 25c j t = 125c j 150a-(5a-1.2v) rated forward current vs. ambient temperature zul. richtstrom in abh. von der umgebungstemp. 150 100 50 0 [c] t a 120 100 80 60 40 20 0 [%] i fav
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